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important notice dear customer, as from october 1st, 2006 philips semiconductors has a new trade name - nxp semiconductors, which will be used in future data sheets together with new contact details. in data sheets where the previous philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - ? koninklijke philips electronics n.v. (year). all rights reserved - is replaced with: - ? nxp b.v. (year). all rights reserved. - if you have any questions related to the data sheet, please contact our nearest sales of?ce via e-mail or phone (details via salesaddresses@nxp.com). thank you for your cooperation and understanding, nxp semiconductors BF904A; BF904Ar; BF904Awr n-channel dual gate mos-fets rev. 04 13 november 2007 product data sheet
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fea tures specially designed for use at 5 v supply voltage short channel transistor with high transfer admittance to input capacitance ratio low noise gain controlled amplifier up to 1 ghz superior cross-modulation performance during agc. applica tions vhf and uhf applications with 3 t o 7 v supply voltage such as television tuners and professional communications equipment. description enhancement type field-effect transistors. the transistors consist of an amplifier mos-fet with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during agc. the BF904A, BF904Ar and BF904Awr are encapsulated in the sot143b, sot143r and sot343r plastic packages respectively. pinning pin description 1 source 2 drain 3 gate 2 4 gate 1 fig.1 simplified outline (sot143b). BF904A marking code: %m7. handbook, 2 columns top view msb014 12 3 4 fig.2 simplified outline (sot143r). BF904Ar marking code: %m8. handbook, 2 columns top view msb035 1 2 4 3 fig.3 simplified outline (sot343r). BF904Awr marking code: mh. h alfpage top view msb842 21 4 3 quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage -- 7v i d drain current -- 30 ma p tot total power dissipation t s 110 c -- 200 mw ? y fs ? forward transfer admittance 22 25 30 ms c ig1-ss input capacitance at gate 1 - 2.2 2.6 pf c rss reverse transfer capacitance f = 1 mhz - 25 35 ff f noise ?gure f = 800 mhz - 2 - db t j operating junction temperature -- 150 c caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to philips specs.: snw-eq-608, snw-fq-302a and snw-fq-302b. rev. 04 - 13 november 2007 2 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr limiting v alues in accordance with the absolute maximum rating system (iec 134). note 1. t s is the temperature of the soldering point of the source lead. symbol p arameter conditions min. max. unit v ds drain-source voltage - 7v i d drain current - 30 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation t s 11 0 c; note 1; see fig.4 - 200 mw t stg storage temperature - 65 +150 c t j operating junction temperature - 150 c fig.4 power derating curve. handbook, halfpage 0 50 100 200 250 0 200 mgl615 150 150 100 50 p tot (mw) t s ( c) rev. 04 - 13 november 2007 3 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr thermal characteristics note 1. soldering point of the source lead. st a tic characteristics t j =2 5 c unless otherwise speci?ed. note 1. r g1 connects gate 1 to v gg = 5 v; see fig.21. dynamic characteristics common source; t amb =2 5 c; v ds = 5 v; v g2-s = 4 v; i d = 1 0 ma; unless otherwise specified. symbol p arameter conditions v alue unit r th j-s thermal resistance from junction to soldering point note 1 200 k/w symbol p arameter conditions min. max. unit v (br)g1-ss gate 1-source breakdown voltage v g2-s =v ds = 0; i g1-s = 1 0 m a 6 15 v v (br)g2-ss gate 2-source breakdown voltage v g1-s =v ds = 0; i g2-s = 1 0 m a 6 15 v v (f)s-g1 forward source-gate 1 voltage v g2-s =v ds = 0; i s-g1 = 1 0 m a 0.5 1.5 v v (f)s-g2 forward source-gate 2 voltage v g1-s =v ds = 0; i s-g2 = 1 0 m a 0.5 1.5 v v g1-s(th) gate 1-source threshold voltage v g2-s =4v ; v ds =5v ; i d =2 0 m a 0.3 1 v v g2-s(th) gate 2-source threshold voltage v g1-s =v ds =5v ; i d =2 0 m a 0.3 1.2 v i dsx drain-source current v g2-s =4v ; v ds =5v ; r g1 = 120 k w ; note 1 81 3 m a i g1-ss gate 1 cut-of f current v g2-s =v ds = 0; v g1-s =5v - 50 na i g2-ss gate 2 cut-of f current v g1-s =v ds = 0; v g2-s =5v - 50 na symbol p arameter conditions min. typ . max. unit ? y fs ? forward transfer admittance pulsed; t j =2 5 c 2 22 53 0m s c ig1-s input capacitance at gate 1 f = 1 mhz - 2.2 2.6 pf c ig2-s input capacitance at gate 2 f = 1 mhz 1 1.5 2 p f c os drain-source capacitance f = 1 mhz 1 1.4 1.7 pf c rs reverse transfer capacitance f = 1 mhz - 25 35 ff f noise ?gure f = 200 mhz; g s = 2 ms; b s =b sopt - 1 1.5 db f = 800 mhz; g s =g sopt ; b s =b sopt - 2 2.8 db rev. 04 - 13 november 2007 4 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fig.5 transfer admittance as a function of the junction temperature; typical values. 50 0 50 150 30 0 mld268 100 t ( c) o j y fs (ms) 40 20 10 fig.6 typical gain reduction as a function of the agc voltage; see fig.21. f = 50 mhz. handbook, halfpage 0 10 20 30 40 50 01234 v (v) agc gain reduction (db) mra769 fig.7 unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see fig.21. v ds = 5 v; v gg = 5 v; f w = 50 mhz. f unw = 60 mhz; t amb =25 c; r g1 = 120 k w. handbook, halfpage 80 90 100 110 120 0 1020304050 v unw (db v) gain reduction (db) mra771 m fig.8 transfer characteristics; typical values. v ds =5v. t j =25 c. 0 20 10 15 5 0 0.4 2.0 mld270 0.8 1.2 1.6 i d (ma) v (v) g1 s 2 v 1.5 v 1 v v = 4 v 3 v 2.5 v g2 s rev. 04 - 13 november 2007 5 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fig.9 output characteristics; typical values. v g2-s =4v. t j =25 c. handbook, halfpage 0 20 8 12 16 4 0 210 mld269 468 i d (ma) v (v) ds 1.3 v 1.2 v 1.1 v 1.0 v 0.9 v v = 1.4 v g1 s fig.10 gate 1 current as a function of gate 1 voltage; typical values. v ds =5v. t j =25 c. handbook, halfpage 0 150 100 50 0 0.5 2.5 mld271 1.0 1.5 2.0 i g1 ( m a) v (v) g1 s 3.5 v 2.5 v 2 v 3 v v = 4 v g2 s fig.11 forward transfer admittance as a function of drain current; typical values. v ds =5v. t j =25 c. handbook, halfpage 0 40 30 20 10 0 4 8 12 16 20 mld272 y fs (ms) i (ma) d 3 v 2.5 v 2 v v = 4 v g2 s 3.5 v fig.12 drain current as a function of gate 1 current; typical values. v ds =5v. v g2-s =4v. t j =25 c. handbook, halfpage 0 16 8 12 4 0 10 50 mld273 20 30 40 i d (ma) i ( m a) g1 rev. 04 - 13 november 2007 6 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fig.13 drain current as a function of gate 1 supply voltage (= v gg ); typical values. v ds = 5 v; v g2-s = 4 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.21. handbook, halfpage 0 12 8 4 0 15 mld275 234 i d (ma) v (v) gg fig.14 drain current as a function of gate 1 (= v gg ) and drain supply voltage; typical values. v g2-s = 4 v; t j =25 c. r g1 connected to v gg ; see fig.21. handbook, halfpage 0 20 10 15 5 0 24 8 mld274 6 v = v (v) gg ds i d (ma) r = 47 k w g1 68 k w 82 k w 100 k w 120 k w 150 k w 180 k w 220 k w v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.21. fig.15 drain current as a function of gate 2 voltage; typical values. handbook, halfpage 0246 12 0 mld276 8 4 i d (ma) 4.5 v 4 v 3.5 v 3 v v (v) g2 s v = 5 v gg fig.16 gate 1 current as a function of gate 2 voltage; typical values. v ds = 5 v; t j =25 c. r g1 = 120 k w (connected to v gg ); see fig.21. handbook, halfpage 0246 40 30 10 0 20 mlb945 i g1 ( m a) v (v) g2 s 4.5 v 4 v 3.5 v 3 v v = 5 v gg rev. 04 - 13 november 2007 7 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fig.17 input admittance as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 10 ma; t amb =25 c. handbook, halfpage 10 3 mld277 10 2 10 10 1 10 2 10 1 y is (ms) f (mhz) b is g is fig.18 reverse transfer admittance and phase as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 10 ma; t amb =25 c. 10 3 mld278 10 2 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 rs ( m s) f (mhz) rs y rs (deg) j j fig.19 forward transfer admittance and phase as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 10 ma; t amb =25 c. 10 3 mld279 10 2 10 1 10 2 10 1 10 10 2 y fs (ms) y fs f (mhz) fs fs (deg) j j fig.20 output admittance as a function of frequency; typical values. v ds = 5 v; v g2 =4v. i d = 10 ma; t amb =25 c. handbook, halfpage mgl614 10 - 1 10 1 10 - 2 10 2 10 10 3 y os (ms) f (mhz) b os g os rev. 04 - 13 november 2007 8 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr fig.21 cross-modulation test set-up. dut v agc c1 4.7 nf r1 10 k w mld171 c4 4.7 nf l1 450 nh c3 12 pf r l 50 w ? v gg v ds r gen 50 v i r2 50 4.7 nf c2 r g1 w w rev. 04 - 13 november 2007 9 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr t able 1 scattering parameters: v ds = 5 v; v g2-s = 4 v; i d = 1 0 ma; t amb =2 5 c t able 2 noise data: v ds = 5 v; v g2-s = 4 v; i d = 1 0 ma; t amb =2 5 c f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.989 - 3.2 2.52 175.9 0.001 87.9 0.989 - 1.7 100 0.987 - 7.9 2.52 169.4 0.001 86.1 0.988 - 4.3 200 0.976 - 15.7 2.47 159.2 0.003 81.4 0.984 - 8.6 300 0.972 - 23.3 2.43 150.5 0.004 80.5 0.985 - 12.7 400 0.947 - 30.6 2.36 139.6 0.005 76.9 0.975 - 16.9 500 0.925 - 37.6 2.26 130.3 0.005 75.6 0.968 - 20.8 600 0.905 - 44.4 2.19 121.1 0.005 75.5 0.961 - 24.7 700 0.883 - 50.9 2.10 1 12.3 0.006 78.0 0.954 - 28.4 800 0.861 - 57.0 2.01 103.6 0.006 85.3 0.946 - 32.0 900 0.841 - 63.0 1.93 95.5 0.006 90.7 0.934 - 35.6 1 000 0.822 - 68.4 1.85 87.8 0.006 102.6 0.931 - 39.3 1200 0.787 - 78.9 1.71 72.3 0.007 127.1 0.923 - 46.7 1400 0.752 - 88.1 1.59 57.3 0.01 1 143.7 0.926 - 54.2 1600 0.723 - 97.3 1.47 40.1 0.019 150.0 0.935 - 62.2 1800 0.685 - 106.3 1.36 25.0 0.021 149.4 0.931 - 69.3 2000 0.665 - 1 14.0 1.31 7.7 0.026 151.5 0.930 - 77.7 2200 0.659 - 1 19.8 1.30 - 14.0 0.035 158.2 0.944 - 89.1 2400 0.670 - 124.2 1.26 - 42.2 0.050 163.4 0.941 - 103.5 2600 0.700 - 129.3 1.10 - 78.2 0.076 162.2 0.849 - 1 19.7 2800 0.729 - 138.7 0.82 - 120.8 0.106 150.5 0.642 - 130.9 3000 0.726 - 150.1 0.52 - 162.8 0.128 137.4 0.480 - 130.6 f (mhz) f min (db) g opt r n ( w ) (ratio) (deg) 800 2.0 0.686 49.6 50.4 rev. 04 - 13 november 2007 10 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr p ackage outlines unit a references outline version european projection issue date iec jedec eiaj mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e y w v q 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143b 97-02-28 0 1 2 mm scale plastic surface mounted package; 4 leads sot143b d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 2 1 3 4 b 1 b p rev. 04 - 13 november 2007 11 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr unit a references outline version european projection issue date iec jedec eiaj mm 1.1 0.9 a 1 max 0.1 b 1 0.88 0.78 c 0.15 0.09 d 3.0 2.8 e 1.4 1.2 h e y w v q 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 e 1 1.7 l p 0.1 0.1 0.2 b p 0.48 0.38 dimensions (mm are the original dimensions) sot143r 97-03-10 0 1 2 mm scale plastic surface mounted package; reverse pinning; 4 leads sot143r d h e e a b v m a x a a 1 l p q detail x c y w m e 1 e b 1 2 4 3 b 1 b p rev. 04 - 13 november 2007 12 of 15
nxp semiconductors product speci?cation n-channel dual gate mos-fet s BF904A; BF904Ar; BF904A wr references outline version european projection issue date iec jedec eiaj sot343r d a a 1 l p q detail x c h e e v m a a b 0 1 2 mm scale x 21 4 3 plastic surface mounted package; reverse pinning; 4 leads sot343r w m b 97-05-21 b p unit a 1 max b p cd e b 1 h e l p qw v mm 0.1 1.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.0 1.3 e 1 0.2 y 0.1 0.2 1.15 dimensions (mm are the original dimensions) 0.45 0.15 0.23 0.13 e 1 a e y b 1 rev. 04 - 13 november 2007 13 of 15
nxp semiconductors BF904A; BF904Ar; BF904Awr n-channel dual gate mos-fets legal information data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. rev. 04 - 13 november 2007 14 of 15
nxp semiconductors BF904A; BF904Ar; BF904Awr n-channel dual gate mos-fets ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 13 november 2007 document identifier: BF904A_ar_awr_n_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. revision history revision history document id release date data sheet status change notice supersedes BF904A_ar_awr_n_4 20071113 product data sheet - BF904A_ar_awr_3 modi?cations: ? fig. 1 and 2 on page 2; figure note changed BF904A_ar_awr_3 (9397 750 05271) 19990514 product speci?cation - BF904A_ar_awr_n_2 BF904A_ar_awr_n_2 (9397 750 05234) 19990201 preliminary speci?cation - BF904A_ar_awr_n_1 BF904A_ar_awr_n_1 (9397 750 04748) 19981130 preliminary speci?cation - -

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